Invention Application
- Patent Title: VOLTAGE LEVEL SHIFTER CELL AND INTEGRATED CIRCUIT INCLUDING THE SAME
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Application No.: US17564915Application Date: 2021-12-29
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Publication No.: US20220271742A1Publication Date: 2022-08-25
- Inventor: Chanhee PARK , Ahreum KIM , Minsu KIM
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2021-0023689 20210222
- Main IPC: H03K3/356
- IPC: H03K3/356 ; H01L27/02

Abstract:
A voltage level shifter cell, which is configured to convert voltage levels of input signals of multi-bits, includes: a first circuit area including a first voltage level shifter configured to convert a 1-bit first input signal from among the input signals; and a second circuit area including a second voltage level shifter configured to convert a 1-bit second input signal from among the input signals, wherein the first circuit area and the second circuit area share a first N-well to which a first power voltage is applied, and the first circuit area and the second circuit area share a second N-well to which a second power voltage is applied, wherein the first N-well is formed to extend in a first direction, and the first N-well and the second N-well are arranged to overlap in a second direction crossing the first direction.
Public/Granted literature
- US11728795B2 Voltage level shifter cell and integrated circuit including the same Public/Granted day:2023-08-15
Information query
IPC分类: