A nonvolatile memory device including a memory cell array including a plurality of nonvolatile memory cells and a row decoder connected with the memory cell array through wordlines may be provided. The row decoder may be configured to precharge a first wordline corresponding to a first row address from among the wordlines, in response to receiving the first row address together with a first command, and maintain a precharge state of the first wordline, in response to receiving a second row address being identical to the first row address together with a second command following the first command.