- 专利标题： SEMICONDUCTOR DEVICE AND METHOD FOR FORMING A SRAM MEMORY CELL STRUCTURE
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申请号： US17410860申请日： 2021-08-24
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公开(公告)号： US20220278111A1公开(公告)日： 2022-09-01
- 发明人: Hidehiro FUJIWARA , Yi-Hsin NIEN , Hung-Jen LIAO
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L27/11
- IPC分类号： H01L27/11
摘要：
An apparatus includes memory cells. A first memory cell of the memory cells includes a first write port laid out in a first doping region and a first read port laid out in a second doping region. The first read port is separated from the first write port by a second write port of a second memory cell of the memory cells.
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