Invention Application
- Patent Title: METHOD FOR FORMING SEMICONDUCTOR DEVICES USING A GLASS STRUCTURE ATTACHED TO A WIDE BAND-GAP SEMICONDUCTOR WAFER
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Application No.: US17829961Application Date: 2022-06-01
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Publication No.: US20220293558A1Publication Date: 2022-09-15
- Inventor: Roland Rupp , Alexander Breymesser , Andre Brockmeier , Carsten von Koblinski , Francisco Javier Santos Rodriguez , Ronny Kern
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Priority: DE102016116499.2 20160902
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/56 ; H01L23/29 ; H01L21/48 ; H01L21/78 ; H01L23/31 ; H01L23/367
Abstract:
A method for forming semiconductor devices includes: attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices; forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure; and reducing a thickness of the wide band-gap semiconductor wafer after attaching the glass structure. Additional methods for forming semiconductor devices are described.
Information query
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