Invention Application
- Patent Title: Impurity Removal in Doped ALD Tantalum Nitride
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Application No.: US17853150Application Date: 2022-06-29
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Publication No.: US20220328348A1Publication Date: 2022-10-13
- Inventor: Rui Li , Xiangjin Xie , Tae Hong Ha , Xianmin Tang , Lu Chen
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/768
- IPC: H01L21/768 ; C23C16/455 ; C23C16/34
Abstract:
Methods of forming copper interconnects are described. A doped tantalum nitride layer formed on a copper layer on a substrate has a first amount of dopant. The doped tantalum nitride layer is exposed to a plasma comprising one or more of helium or neon to form a treated doped tantalum nitride layer with a decreased amount of dopant. Apparatus for performing the methods are also described.
Public/Granted literature
- US12243774B2 Impurity removal in doped ALD tantalum nitride Public/Granted day:2025-03-04
Information query
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