• Patent Title: Method of Fine Pitch Hybrid Bonding with Dissimilar CTE Wafers and Resulting Structures
  • Application No.: US17654637
    Application Date: 2022-03-14
  • Publication No.: US20220336405A1
    Publication Date: 2022-10-20
  • Inventor: Saijin LiuFang OuTongbi T. Jiang
  • Applicant: Apple Inc.
  • Applicant Address: US CA Cupertino
  • Assignee: Apple Inc.
  • Current Assignee: Apple Inc.
  • Current Assignee Address: US CA Cupertino
  • Main IPC: H01L23/00
  • IPC: H01L23/00
Method of Fine Pitch Hybrid Bonding with Dissimilar CTE Wafers and Resulting Structures
Abstract:
Hybrid bonded structures and methods of manufacture are described. In an embodiment, a hybrid bonded structure includes a first plurality of first conductive bonding regions of a first substrate stack bonded directly to a second plurality of second conductive bonding regions of a second substrate stack, and a first dielectric layer of the first substrate stack bonded to a second dielectric layer of the second substrate stack with an intermediate organic adhesive layer.
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