Invention Application
- Patent Title: INTEGRATED CIRCUIT DEVICES INCLUDING STACKED GATE STRUCTURES WITH DIFFERENT DIMENSIONS
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Application No.: US17361381Application Date: 2021-06-29
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Publication No.: US20220336456A1Publication Date: 2022-10-20
- Inventor: BYOUNGHAK HONG , Seunghyun Song
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L25/07 ; H01L27/06 ; H01L29/06

Abstract:
Integrated circuit devices may include a lower transistor and an upper transistor stacked on a substrate, and the upper transistor may overlap the lower transistor. The upper transistor may include an upper gate structure, and the lower transistor may include a lower gate structure, and the upper gate structure and the lower gate structure may have different widths in a horizontal direction.
Public/Granted literature
- US12051697B2 Integrated circuit devices including stacked gate structures with different dimensions Public/Granted day:2024-07-30
Information query
IPC分类: