An image sensor includes an array of metasurface structures and an array of optical-to-electrical conversion units. The array of metasurface structures is located above the array of optical-to-electrical conversion units. A first optical-to-electrical conversion unit in the array of optical-to-electrical conversion units includes a plurality of optical-to-electrical conversion elements, each optical-to-electrical conversion element in the first optical-to-electrical conversion unit corresponds to one frequency band in a spectrum. A first metasurface structure in the array of metasurface structures includes a first substrate and a microstructure located above the first substrate. The first substrate and the microstructure are configured to transmit an optical signal at each frequency band to an optical-to-electrical conversion element corresponding to each frequency band. The microstructure is a rotationally symmetric structure, and a rotation angle of the rotationally symmetric structure is less than or equal to 90 degrees.