• Patent Title: MANUFACTURING METHOD FOR MONOCRYSTALLINE SILICON SHEET
  • Application No.: US17762527
    Application Date: 2020-09-15
  • Publication No.: US20220344531A1
    Publication Date: 2022-10-27
  • Inventor: Xin DING
  • Applicant: Xin DING
  • Applicant Address: CN Shanghai
  • Assignee: Xin DING
  • Current Assignee: Xin DING
  • Current Assignee Address: CN Shanghai
  • Priority: CN201910909721.7 20190925
  • International Application: PCT/CN2020/115225 WO 20200915
  • Main IPC: H01L31/18
  • IPC: H01L31/18 H01L31/036
MANUFACTURING METHOD FOR MONOCRYSTALLINE SILICON SHEET
Abstract:
The present application provides a method for manufacturing a monocrystalline silicon sheet, including: cutting a monocrystalline silicon rod along a radial or an axial direction of the monocrystalline silicon rod to obtain a monocrystalline silicon substrate; etching a porous silicon structure on a top surface and a bottom surface of the monocrystalline silicon substrate by wet etching; depositing a monocrystalline silicon thin layer on the porous silicon structure by chemical vapor deposition, so that a thickness of the monocrystalline silicon thin layer reaches a predetermined value; and striping the monocrystalline silicon thin layer from the porous silicon structure to obtain the monocrystalline silicon sheet. In the present application, the production capacity of directly manufacturing a single crystal silicon wafer by a chemical vapor deposition method can be improved, and a process for manufacturing a silicon wafer is combined with the process of a diffusion emitter conventionally belonging to cell manufacturing, so that a manufacturing cost of a solar monocrystalline silicon cell is significantly reduced.
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