Invention Application
- Patent Title: LEAKAGE CURRENT DETECTION CIRCUIT FOR SEMICONDUCTOR
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Application No.: US17732819Application Date: 2022-04-29
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Publication No.: US20220357410A1Publication Date: 2022-11-10
- Inventor: JUNICHI HASEGAWA , AKIMASA NIWA
- Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation
- Applicant Address: JP Kariya-city; JP Toyota-shi; JP Nisshin-shi
- Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA,MIRISE Technologies Corporation
- Current Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA,MIRISE Technologies Corporation
- Current Assignee Address: JP Kariya-city; JP Toyota-shi; JP Nisshin-shi
- Priority: JP2021-078530 20210506,JP2022-006415 20220119
- Main IPC: G01R31/52
- IPC: G01R31/52 ; H03K17/082

Abstract:
A circuit for detecting a leakage current in a semiconductor element includes a setting circuit and a detector. The semiconductor element includes a first terminal at a high-potential-side of the semiconductor element, a second terminal at a low-potential-side of the semiconductor element, and a control terminal. The control terminal receives a signal for controlling a conduction state between the first terminal and the second terminal. The setting circuit sets a duration during which a charging current flows to the control terminal as an undetectable duration, in response to turning on the semiconductor element. The detector outputs a detected signal based on a condition that the leakage current flowing from the control terminal to the second terminal, after the undetectable duration has been elapsed.
Public/Granted literature
- US12174266B2 Leakage current detection circuit for semiconductor Public/Granted day:2024-12-24
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