Invention Application
- Patent Title: MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
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Application No.: US17861430Application Date: 2022-07-11
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Publication No.: US20220359575A1Publication Date: 2022-11-10
- Inventor: Masashi OOTA , Noritaka ISHIHARA , Motoki NAKASHIMA , Yoichi KUROSAWA , Shunpei YAMAZAKI , Yasuharu HOSAKA , Toshimitsu OBONAI , Junichi KOEZUKA
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi
- Priority: JP2013-248320 20131129,JP2014-033904 20140225,JP2014-107582 20140523
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/02 ; H01L49/02 ; H01L29/66 ; H01L29/786 ; H01L21/425 ; H01L21/477
Abstract:
To provide a method for manufacturing a semiconductor device including an oxide semiconductor film having conductivity, or a method for manufacturing a semiconductor device including an oxide semiconductor film having a light-transmitting property and conductivity. The method for manufacturing a semiconductor device includes the steps of forming an oxide semiconductor film over a first insulating film, performing first heat treatment in an atmosphere where oxygen contained in the oxide semiconductor film is released, and performing second heat treatment in a hydrogen-containing atmosphere, so that an oxide semiconductor film having conductivity is formed.
Information query
IPC分类:
