Invention Application
- Patent Title: NEGATIVE TONE PHOTORESIST FOR EUV LITHOGRAPHY
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Application No.: US17875322Application Date: 2022-07-27
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Publication No.: US20220365430A1Publication Date: 2022-11-17
- Inventor: Li-Po YANG , Wei-Han LAI , Ching-Yu CHANG
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: G03F7/038
- IPC: G03F7/038 ; G03F7/20
Abstract:
A negative tone photoresist and method for developing the negative tone photoresist is disclosed. For example, the negative tone photoresist includes a solvent, a dissolution inhibitor, and a polymer. The polymer includes a hydroxyl group. The polymer may be greater than 40 weight percent of a total weight of the negative tone photoresist.
Information query
IPC分类:
