Invention Application
- Patent Title: SYSTEMS AND METHODS FOR POWER SAVINGS IN ROW REPAIRED MEMORY
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Application No.: US17876769Application Date: 2022-07-29
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Publication No.: US20220366998A1Publication Date: 2022-11-17
- Inventor: James S. Rehmeyer , Yoshinori Fujiwara
- Applicant: Micron Technology , Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology , Inc.
- Current Assignee: Micron Technology , Inc.
- Current Assignee Address: US ID Boise
- Main IPC: G11C29/44
- IPC: G11C29/44 ; G11C11/408

Abstract:
A memory device includes a memory bank that includes a first set of memory rows in a first section of the memory bank, a first set of redundant rows in a first section of the memory bank, a second set of memory rows in a second section of the memory bank, and a second set of redundant rows in the second section of the memory bank. The memory bank also includes a repeater blocker circuit that when in operation selectively blocks a signal from transmission to the second section of the memory bank and blocker control circuitry that when in operation transmits a control signal to control the selective blocking of the signal by the repeater blocker circuit.
Public/Granted literature
- US11783909B2 Systems and methods for power savings in row repaired memory Public/Granted day:2023-10-10
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