Invention Application
- Patent Title: INTEGRATED CIRCUIT
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Application No.: US17875257Application Date: 2022-07-27
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Publication No.: US20220367519A1Publication Date: 2022-11-17
- Inventor: Guo-Huei WU , Chi-Yu LU , Ting-Yu CHEN , Li-Chun TIEN
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L27/118
- IPC: H01L27/118 ; H01L27/02

Abstract:
A method is provided, and including operations as below: forming multiple active areas extending in a first direction; forming multiple conductive patterns extending in a second direction different from the first direction and arranged in a first layer above the active areas; forming multiple gates extending parallel to the conductive patterns; and forming a first set of conductive lines extending in the first direction and arranged in three first metal tracks that are in a second layer above the first layer, wherein one of the first set of conductive lines is arranged in a middle track of the three first metal tracks, coupled to one of the gates and overlap a first shallow trench region between two of the active areas.
Public/Granted literature
- US12300699B2 Integrated circuit Public/Granted day:2025-05-13
Information query
IPC分类: