Invention Application
- Patent Title: Method for Manufacturing Silicon Nitride Substrate
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Application No.: US17761783Application Date: 2020-09-18
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Publication No.: US20220371963A1Publication Date: 2022-11-24
- Inventor: Seung Yeon Lee , Seunggwan Lee , Eun Ok Chi
- Applicant: OCI Company Ltd.
- Applicant Address: KR Seoul
- Assignee: OCI Company Ltd.
- Current Assignee: OCI Company Ltd.
- Current Assignee Address: KR Seoul
- Priority: KR10-2019-0116131 20190920
- International Application: PCT/KR2020/012666 WO 20200918
- Main IPC: C04B35/593
- IPC: C04B35/593 ; C04B35/626 ; C04B35/636 ; C04B41/45

Abstract:
The present invention relates to a method for manufacturing a silicon nitride substrate and, more specifically, comprises the steps of: forming a slurry by mixing silicon nitride powder, a ceramic additive, and a solvent; molding the slurry to form sheets; sandwiching at least one of the sheets between a lower plate and an upper plate to form a stacked structure; degreasing the stacked structure; and sintering the stacked structure. At least one of the lower plate and the upper plate comprises a plurality of protrusions provided on one surface thereof, and the protrusions extend in parallel to each other in one direction.
Information query
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