Invention Application
- Patent Title: INFRARED IMAGE SENSOR COMPONENT MANUFACTURING METHOD
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Application No.: US17884279Application Date: 2022-08-09
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Publication No.: US20220384503A1Publication Date: 2022-12-01
- Inventor: Chien-Ying WU , Li-Hsin CHU , Chung-Chuan TSENG , Chia-Wei LIU
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
A method includes following steps. A first III-V compound layer is epitaxially grown over a semiconductive substrate. The first III-V compound layer has an energy gap in a gradient distribution. A source/drain contact is formed over the first III-V compound layer. A gate structure is formed over the first III-V compound layer.
Information query
IPC分类:
