Invention Application
- Patent Title: IMAGE SENSOR INCLUDING A TRANSISTOR WITH A VERTICAL CHANNEL AND A METHOD OF MANUFACTURING THE SAME
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Application No.: US17743788Application Date: 2022-05-13
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Publication No.: US20220384512A1Publication Date: 2022-12-01
- Inventor: Wonseok LEE , Eunsub SHIM
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2021-0070967 20210601,KR10-2021-0108178 20210817
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An image sensor includes: photodiodes arranged in a substrate; active pillars connected to the photodiodes and extending in a vertical direction perpendicular to a bottom surface of the substrate; at least two transistors stacked in the vertical direction, wherein portions of the active pillars are channel areas of the at least two transistors; a floating diffusion (FD) area disposed under a transfer transistor, which is one of the at least two transistors, wherein the FD area is configured to receive charge from the photodiode through the transfer transistor and the portions of the active pillars; and a light transmitting layer disposed on a top surface of the substrate.
Information query
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