Invention Application
- Patent Title: GARNET COMPOUND, OXIDE SINTERED COMPACT, OXIDE SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, ELECTRONIC DEVICE AND IMAGE SENSOR
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Application No.: US17885147Application Date: 2022-08-10
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Publication No.: US20220388908A1Publication Date: 2022-12-08
- Inventor: Kazuyoshi INOUE , Masatoshi SHIBATA , Emi KAWASHIMA , Yuki TSURUMA , Shigekazu TOMAI
- Applicant: IDEMITSU KOSAN CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee Address: JP Tokyo
- Priority: JP2017-068069 20170330,JP2017-207594 20171026,JP2017-237754 20171212,JP2018-016727 20180201
- Main IPC: C04B35/01
- IPC: C04B35/01 ; C23C14/34 ; H01L27/146 ; H01L29/786
Abstract:
A sintered oxide contains In element, Y element, and Ga element at respective atomic ratios as defined in formulae (1) to (3) below, 0.80≤In/(In+Y+Ga)≤0.96 (1), 0.02≤Y/(In+Y+Ga)≤0.10 (2), and 0.02≤Ga/(In+Y+Ga)≤0.10 (3), and Al element at an atomic ratio as defined in a formula (4) below, 0.005≤Al/(In+Y+Ga+Al)≤0.07 (4), where In, Y, Ga, and Al in the formulae represent the number of atoms of the In element, Y element, Ga element, and Al element in the sintered oxide, respectively.
Information query
