Invention Application
- Patent Title: METHODS OF FORMING EPITAXIAL AlScN RESONATORS WITH SUPERLATTICE STRUCTURES INCLUDING AlGaN INTERLAYERS AND VARIED SCANDIUM CONCENTRATIONS FOR STRESS CONTROL AND RELATED STRUCTURES
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Application No.: US17527866Application Date: 2021-11-16
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Publication No.: US20220416756A1Publication Date: 2022-12-29
- Inventor: Craig Moe , Jeffrey M. Leathersich , Jeffrey B. Shealy
- Applicant: Akoustis,Inc.
- Applicant Address: US NC Huntersville
- Assignee: Akoustis,Inc.
- Current Assignee: Akoustis,Inc.
- Current Assignee Address: US NC Huntersville
- Main IPC: H03H9/02
- IPC: H03H9/02 ; H03H3/02 ; H03H9/05 ; H03H9/17
Abstract:
A method of forming a resonator structure can be provided by forming one or more template layers on a substrate, (a) epitaxially forming an AlScN layer on the template layer to a first thickness, (b) epitaxially forming an AlGaN interlayer on the AlScN layer to a second thickness that is substantially less than the first thickness, and repeating operations (a) and (b) until a total thickness of all AlScN layers and AlGaN interlayers provides a target thickness for a single crystal AlScN/AlGaN superlattice resonator structure on the template layer.
Information query
