- 专利标题： FILM FORMING APPARATUS AND FILM FORMING METHOD
-
申请号： US17854944申请日： 2022-06-30
-
公开(公告)号： US20230005989A1公开(公告)日： 2023-01-05
- 发明人: Keisuke SATO , Toru KITADA , Atsushi GOMI , Kanto NAKAMURA
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 优先权： JP2021-110267 20210701
- 主分类号： H01L27/22
- IPC分类号： H01L27/22 ; H01L43/02 ; H01L21/67
摘要：
A film forming apparatus for forming a laminated structure on a substrate to form a magnetic tunnel junction element is disclosed. The film forming apparatus comprises: a plurality of processing chambers where a magnetic layer and an insulating layer are formed on the substrate; a heat treatment chamber where a magnetic field is applied to the substrate to perform heat treatment; a vacuum transfer chamber that connects the processing chambers and the heat treatment chamber; and a controller.