Invention Application
- Patent Title: COMPOSITE SUBSTRATE, COMPOSITE SUBSTRATE PREPARATION METHOD, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
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Application No.: US17857468Application Date: 2022-07-05
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Publication No.: US20230009774A1Publication Date: 2023-01-12
- Inventor: Bo GAO , Boning HUANG , Yuxi WAN
- Applicant: HUAWEI TECHNOLOGIES CO., LTD.
- Applicant Address: CN Shenzhen
- Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee: HUAWEI TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Shenzhen
- Priority: CN202110765400.1 20210706
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L21/02
Abstract:
Embodiments of this application relate to the field of semiconductor technologies, and provide composite substrate that comprises: a first silicon carbide layer comprising monocrystalline silicon carbide, and a second silicon carbide layer bonded to the first silicon carbide layer, wherein defect density of at least a part of the second silicon carbide layer is greater than defect density of the first silicon carbide layer.
Information query
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