- 专利标题: UV Lithography System
-
申请号: US17372446申请日: 2021-07-10
-
公开(公告)号: US20230011685A1公开(公告)日: 2023-01-12
- 发明人: Kenneth Carlisle Johnson
- 申请人: Kenneth Carlisle Johnson
- 申请人地址: US CA Santa Clara
- 专利权人: Kenneth Carlisle Johnson
- 当前专利权人: Kenneth Carlisle Johnson
- 当前专利权人地址: US CA Santa Clara
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
A multifunction UV or DUV (ultraviolet/deep-ultraviolet) lithography system uses a modified Schwarzschild flat-image projection system to achieve diffraction-limited, distortion-free and double-telecentric imaging over a large image field at high numerical aperture. A back-surface primary mirror enables wide-field imaging without large obscuration loss, and additional lens elements enable diffraction-limited and substantially distortion-free, double-telecentric imaging. The system can perform maskless lithography (either source-modulated or spatially-modulated), mask-projection lithography (either conventional imaging or holographic), mask writing, wafer writing, and patterning of large periodic or aperiodic structures such as microlens arrays and spatial light modulators, with accurate field stitching to cover large areas exceeding the image field size.
公开/授权文献
- US11561476B1 UV lithography system 公开/授权日:2023-01-24
信息查询
IPC分类: