- 专利标题: EPITAXY STRUCTURE INCLUDING A PLURALITY OF SEMICONDUCTOR DEVICES
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申请号: US17720872申请日: 2022-04-14
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公开(公告)号: US20230143907A1公开(公告)日: 2023-05-11
- 发明人: Junhee Choi , Kiho Kong , Nakhyun Kim , Joosung Kim , Younghwan Park , Junghun Park , Dongchul Shin , Eunsung Lee , Joohun Han
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20210154295 2021.11.10
- 主分类号: H01L33/04
- IPC分类号: H01L33/04 ; H01L27/15 ; H01L33/24 ; H01L33/44
摘要:
Provided is an epitaxy structure including a substrate having an upper surface, the upper surface having a single crystal structure, a two-dimensional material layer disposed on the upper surface of the substrate, and a plurality of nanorod light emitting devices disposed on an upper surface of the two-dimensional material layer, each of the plurality of nanorod light emitting devices having a nanorod shape extending in a vertical direction, wherein each of the plurality of nanorod light emitting devices includes a light emitting nanorod, and a passivation film disposed adjacent to a sidewall of the light emitting nanorod, the passivation film having insulation.
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