- 专利标题: PHASE CHANGE MEMORY WITH ENCAPSULATED PHASE CHANGE ELEMENT
-
申请号: US17519924申请日: 2021-11-05
-
公开(公告)号: US20230144050A1公开(公告)日: 2023-05-11
- 发明人: Dexin Kong , Kangguo Cheng , Juntao Li , Zheng Xu
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L45/00
- IPC分类号: H01L45/00
摘要:
Semiconductor devices and methods for forming the semiconductor devices are described. An example semiconductor structure can include a substrate including a first electrode. The example semiconductor structure can further include a heater element directly contacting the first electrode in the substrate. The example semiconductor structure a phase change cell directly on the heater element. The sidewalls of the phase change cell can be encapsulated with a spacer. The example semiconductor structure a second electrode directly on the phase change cell and the spacer.
信息查询
IPC分类: