Invention Publication
- Patent Title: NON-VOLATILE MEMORY DEVICE INCLUDING MULTI-STACK MEMORY BLOCK AND OPERATING METHOD THEREOF
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Application No.: US18052428Application Date: 2022-11-03
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Publication No.: US20230146041A1Publication Date: 2023-05-11
- Inventor: Yohan LEE , Jaeduk Yu , Jiho Cho
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20210154260 2021.11.10 KR 20220039874 2022.03.30
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
According to an example embodiment of the inventive concepts, an operating method of a memory system including a memory controller and a non-volatile memory device, the non-volatile memory device being operated under control by the memory controller and the non-volatile memory including a first memory block and a second memory block, the method includes determining, by the memory controller, whether the first memory block satisfies a block reset condition, in response to the first memory block satisfying the block reset condition, applying a turn-on voltage to word lines of dummy cells included in the first memory block, transferring data pre-programmed in the first memory block to the second memory block, erasing the first memory block, and re-programming the dummy cells of the first memory block.
Public/Granted literature
- US12147666B2 Non-volatile memory device including multi-stack memory block and operating method thereof Public/Granted day:2024-11-19
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