Invention Publication
- Patent Title: SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
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Application No.: US17545996Application Date: 2021-12-08
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Publication No.: US20230147806A1Publication Date: 2023-05-11
- Inventor: Shang-Chun Chen , Po-Chun Yeh , Pei-Jer Tzeng
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Priority: TW 0141457 2021.11.08
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/66 ; H01L23/522 ; H01L21/768

Abstract:
A semiconductor structure including a substrate, a conductive layer, and a semiconductor device is provided. The substrate includes a first surface, a second surface opposite to the first surface, at least one insulating vacancy extending from the first surface toward the second surface, and a through hole passing through the substrate. The conductive layer fills in the through hole. The semiconductor device is disposed on the second surface and is electrically connected to the conductive layer, and the at least one insulating vacancy is distributed corresponding to the semiconductor device.
Information query
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