Invention Publication
- Patent Title: DUAL RESISTOR INTEGRATION
-
Application No.: US17525167Application Date: 2021-11-12
-
Publication No.: US20230154915A1Publication Date: 2023-05-18
- Inventor: Bhaskar Srinivasan , Qi-Zhong Hong , Jarvis Benjamin Jacobs
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L23/522 ; H01L27/13

Abstract:
An electronic device includes a first thin film resistor and a second thin film resistor above a dielectric layer that extends in a first plane of orthogonal first and second directions, the first resistor has three portions with the second portion extending between the first and third portions, and a recess etched into the top side of the second portion by a controlled etch process to increase the sheet resistance of the first resistor for dual thin film resistor integration.
Information query
IPC分类: