Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
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Application No.: US18055618Application Date: 2022-11-15
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Publication No.: US20230178497A1Publication Date: 2023-06-08
- Inventor: Masashi UECHA , Yuji NAGUMO , Hiroki TSUMA , Teruaki KUMAZAWA
- Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation
- Applicant Address: JP Kariya-city
- Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA,MIRISE Technologies Corporation
- Current Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA,MIRISE Technologies Corporation
- Current Assignee Address: JP Kariya-city
- Priority: JP 21197811 2021.12.06
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L29/16 ; H01L21/78
Abstract:
A semiconductor device includes a semiconductor substrate, an end region, and an active region. The end region is located above the semiconductor substrate, has a frame shape, and has been brought into contact with a blade in a scribing process. The active region is surrounded by the end region and is configured to serve as a path of a main current. The end region has a stress relaxation film on an outermost surface of the end region.
Information query
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