Respective temperature values for a plurality of dies of a memory device is obtained. Each respective temperature value is indicative of a temperature at a corresponding die of the plurality of dies of the memory device. The plurality of dies based on the respective temperature values, each die of the plurality of dies is ordered. A zone creation command directed to the memory device is received from a host. The zone creation command on the memory device on a die of the ordered plurality of dies is performed based on a temperature threshold.