- 专利标题: DEPOSITION OF IODINE-CONTAINING CARBON FILMS
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申请号: US17555140申请日: 2021-12-17
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公开(公告)号: US20230193460A1公开(公告)日: 2023-06-22
- 发明人: Phong NGUYEN , Fabrizio MARCHEGIANI , Nathan STAFFORD , Xiangyu GUO
- 申请人: American Air Liquide, Inc.
- 申请人地址: US CA Fremont
- 专利权人: American Air Liquide, Inc.
- 当前专利权人: American Air Liquide, Inc.
- 当前专利权人地址: US CA Fremont
- 主分类号: C23C16/455
- IPC分类号: C23C16/455 ; C23C16/56 ; C23C16/505
摘要:
A method for depositing an iodine-containing film on a substrate material comprises: exposing the substrate material to a vapor of a film-forming composition comprising an iodine-containing precursor having a formula of CaHxIyFz, wherein a=1-10, x≥0, y≥1, z≥0, x+y+z=a, 2a or 2a+2; provided that when a=1, x=2 and z=0, y is not equal to 2, and depositing the iodine-containing film formed by the iodine-containing precursor on the substrate material through a vapor deposition method. The method further comprises exposing the substrate material to a vapor of a co-reactant nitrogen-containing molecule having a general formula CxHyFzNH, where x=1-6, y=0-13, z=0-13, and a=1-2 or CxHyFzN—R1, where x=1-6, y=0-13, z=0-13, and R1 is a C1-C5 hydrocarbon.
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