- 专利标题: INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD OF THE SAME
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申请号: US17554183申请日: 2021-12-17
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公开(公告)号: US20230197145A1公开(公告)日: 2023-06-22
- 发明人: Huai-Ying HUANG , Yu-Ming LIN
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G11C11/413
- IPC分类号: G11C11/413
摘要:
A device is disclosed, including a latch circuit, a first pass-gate transistor, and a second pass-gate transistor. The latch circuit stores a bit data and is arranged in a first layer. The first pass-gate transistor and the second pass-gate transistor are arranged in a second layer separated from the first layer. The first pass-gate transistor is coupled between a first bit line and a first terminal of the latch circuit, and the second pass-gate transistor is coupled between a second bit line and a second terminal of the latch circuit.
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