- 专利标题: INTEGRATED CIRCUIT AND METHOD OF FORMING THE SAME
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申请号: US18190703申请日: 2023-03-27
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公开(公告)号: US20230230971A1公开(公告)日: 2023-07-20
- 发明人: Chun-Yao KU , Wen-Hao CHEN , Kuan-Ting CHEN , Ming-Tao YU , Jyun-Hao CHANG
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 分案原申请号: US17095149 2020.11.11
- 主分类号: H01L27/02
- IPC分类号: H01L27/02 ; G06F30/392 ; H01L23/538 ; G06F30/20 ; H10K30/83
摘要:
A method of forming an integrated circuit includes placing a first and a second standard cell layout design of the integrated circuit on a layout design, and manufacturing the integrated circuit based on at least the first or second standard cell layout design. The first standard cell layout design has a first height. The second standard cell layout design has a second height. Placing the first standard cell layout design includes placing a first set of pin layout patterns on a first layout level over a first set of gridlines, extending in a first direction, and having a first width in a second direction. Placing the second standard cell layout design includes placing a second set of pin layout patterns on the first layout level over a second set of gridlines, extending in the first direction, and having a second width in the second direction.
公开/授权文献
- US12009356B2 Integrated circuit and method of forming the same 公开/授权日:2024-06-11
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