- 专利标题： MEMORY DEVICE AND METHOD OF FORMING THE SAME AND INTEGRATED CIRCUIT
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申请号： US17738007申请日： 2022-05-06
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公开(公告)号： US20230240081A1公开(公告)日： 2023-07-27
- 发明人: Sam Vaziri , Isha Datye , Xinyu BAO
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L27/24
- IPC分类号： H01L27/24 ; H01L45/00
摘要：
A memory device includes a selector and a memory cell. The selector includes a first electrode layer, a second electrode layer and a selector layer between the first electrode and the second electrode. The selector layer includes a first element selected from a group consisting of silicon (Si), germanium (Ge), tin (Sn) and aluminum (Al), a second element selected from a group consisting of oxygen (O) and nitrogen (N), and a third element selected from a group consisting of tellurium (Te), selenium (Se) and antimony (Sb).
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