- 专利标题: FAULT RESILIENT STORAGE DEVICE
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申请号: US18131492申请日: 2023-04-06
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公开(公告)号: US20230244570A1公开(公告)日: 2023-08-03
- 发明人: Yang Seok KI , Sungwook RYU , Seontaek KIM , Changho CHOI , Ehsan NAJAFABADI
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 主分类号: G06F11/14
- IPC分类号: G06F11/14 ; G06F3/06 ; G06F11/07 ; G06F11/30 ; G06F11/32 ; G06F11/34 ; G06F11/10 ; G06F11/20 ; G06F12/1009 ; G06F12/0882
摘要:
A storage device, and a method for operating a storage device. In some embodiments, the storage device includes storage media, and the method includes: determining, by the storage device, that the storage device is in a first fault state from which recovery is possible by power cycling the storage device or by formatting the storage media; determining, by the storage device, that the storage device is in a second fault state from which partial recovery is possible by operating the storage device with reduced performance, with reduced capacity, or in a read-only mode; and operating the storage device with reduced performance, with reduced capacity, or in the read-only mode.
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