发明公开
- 专利标题： COMBINING FOCUSED ION BEAM MILLING AND SCANNING ELECTRON MICROSCOPE IMAGING
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申请号： US17591569申请日： 2022-02-02
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公开(公告)号： US20230245933A1公开(公告)日： 2023-08-03
- 发明人: Youfei JIANG , Michael STEIGERWALD , Christopher SEARS
- 申请人： KLA Corporation
- 申请人地址： US CA Milpitas
- 专利权人： KLA Corporation
- 当前专利权人： KLA Corporation
- 当前专利权人地址： US CA Milpitas
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01J37/31 ; H01J37/147 ; H01L21/263 ; B23K15/00 ; B23K15/02 ; B23K15/08
摘要：
The dual focused ion beam and scanning electron beam system includes an electron source that generates an electron beam and an ion source that generates an ion beam. The electron beam column directs an electron beam at a normal angle relative to a top surface of the stage. An ion beam column directs the ion beam at the stage. The ion beam is at an angle relative to the electron beam. A detector receives the electron beam reflected from the wafer on the stage.
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