Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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Application No.: US17938344Application Date: 2022-10-06
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Publication No.: US20230034015A1Publication Date: 2023-02-02
- Inventor: Junyeong HEO , Unbyoung KANG , Donghoon WON
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2019-0134393 20191028
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/48 ; H01L21/78 ; H01L21/3065

Abstract:
A semiconductor device includes a semiconductor substrate having a first surface and a second surface opposing each other, and a side surface between the first and second surfaces, and including a device region on the first surface a wiring structure on the surface of the semiconductor substrate, and having a dielectric layer and a metal wiring in the dielectric layer and electrically connected to the device region, and an insulating material layer on a side surface of the wiring structure and having a side surface connected to the side surface of the semiconductor substrate. The side surface of the insulating material layer has a first wave-shaped pattern in which concave-convex portions are repeated in a direction of the wiring structure that is perpendicular to the semiconductor substrate, and the side surface of the semiconductor substrate has a second wave-shaped pattern in which concave-convex portions are repeated in the direction.
Public/Granted literature
- US11935832B2 Semiconductor device and method of fabricating the same Public/Granted day:2024-03-19
Information query
IPC分类: