- 专利标题: SEMICONDUCTOR FEATURE AND METHOD FOR MANUFACTURING THE SAME
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申请号: US18366274申请日: 2023-08-07
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公开(公告)号: US20230377945A1公开(公告)日: 2023-11-23
- 发明人: Harry-Hak-Lay CHUANG , Chung-Jen HUANG , Wen-Tuo HUANG , Wei-Cheng WU
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 分案原申请号: US17471666 2021.09.10
- 主分类号: H01L21/762
- IPC分类号: H01L21/762 ; H01L21/768 ; H01L21/308 ; H01L21/02
摘要:
A semiconductor feature includes: a semiconductor substrate; a dielectric structure and a semiconductor device disposed on the semiconductor substrate; an interconnecting structure disposed in the dielectric structure and connected to the semiconductor device; an STI structure disposed in the semiconductor substrate and surrounding the semiconductor device; two DTI structures penetrating the semiconductor substrate and the STI structure and surrounding the semiconductor device; a passivation structure connected to the semiconductor substrate and the DTI structures and located opposite to the interconnecting structure; and a conductive structure surrounded by the passivation structure, penetrating the semiconductor substrate and the STI structure into the dielectric structure, located between the DTI structures and electrically connected to the semiconductor device via the interconnecting structure.
公开/授权文献
- US12107001B2 Semiconductor feature and method for manufacturing the same 公开/授权日:2024-10-01
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