- 专利标题： SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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申请号： US18191092申请日： 2023-03-28
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公开(公告)号： US20230387025A1公开(公告)日： 2023-11-30
- 发明人: Tai-Hao PENG , Yao-Tsung HUANG
- 申请人： MEDIATEK Inc.
- 申请人地址： TW Hsinchu City
- 专利权人： MEDIATEK Inc.
- 当前专利权人： MEDIATEK Inc.
- 当前专利权人地址： TW Hsinchu City
- 主分类号： H01L23/538
- IPC分类号： H01L23/538 ; H01L23/31 ; H01L21/56
摘要：
A semiconductor device includes a first layer structure, a second layer structure, a bridge die, a first SoC and a second SoC. The bridge die is disposed between the first layer structure and the second layer structure. The first SoC and the second SoC are disposed on the second layer structure. The first SoC and the second SoC are electrically connected through the bridge die.
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