Provided is a mask blank. A mask blank comprising a phase shift film on a transparent substrate, the phase shift film having a structure in which a first layer, a second layer, and a third layer are layered in this order on the transparent substrate, the first layer and the third layer including hafnium and oxygen, and the second layer including silicon and oxygen, wherein when thicknesses of the first layer, the second layer, and the third layer are represented by D1, D2, and D3, respectively, all relationships of (Expression 1-A) to (Expression 1-D) are satisfied, or all relationships of (Expression 2-A) to (Expression 2-D) are satisfied.