• 专利标题: LITHIUM-DOPED SILICON-BASED NEGATIVE ELECTRODE ACTIVE MATERIAL, METHOD OF PRODUCING THE SAME, METHOD OF POST-TREATING THE SAME, AND NEGATIVE ELECTRODE AND SECONDARY BATTERY INCLUDING THE SAME
  • 申请号: US18327058
    申请日: 2023-06-01
  • 公开(公告)号: US20230395800A1
    公开(公告)日: 2023-12-07
  • 发明人: Eun Jun PARKJoon Hyung MOONJu Ho CHUNG
  • 申请人: SK ON CO., LTD.
  • 申请人地址: KR Seoul
  • 专利权人: SK ON CO., LTD.
  • 当前专利权人: SK ON CO., LTD.
  • 当前专利权人地址: KR Seoul
  • 优先权: KR 20220067327 2022.06.02
  • 主分类号: H01M4/58
  • IPC分类号: H01M4/58 C01B33/32
LITHIUM-DOPED SILICON-BASED NEGATIVE ELECTRODE ACTIVE MATERIAL, METHOD OF PRODUCING THE SAME, METHOD OF POST-TREATING THE SAME, AND NEGATIVE ELECTRODE AND SECONDARY BATTERY INCLUDING THE SAME
摘要:
Provided are a lithium-doped silicon-based negative electrode active material, a method of producing the same, and a negative electrode and a lithium secondary battery including the same. According to an exemplary embodiment of the present invention, a method of producing a negative electrode active material for a secondary battery including: a) a metal doping process of mixing a silicon-based material and a metal precursor and performing a heat treatment to dope the silicon-based material with a metal; and b) an acid gas treatment process of treating the metal-doped silicon-based material in an acid gas atmosphere to remove residual metal may be provided.
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