- 专利标题: SEMICONDUCTOR DEVICES WITH EMBEDDED SILICON LENS
-
申请号: US17752640申请日: 2022-05-24
-
公开(公告)号: US20230408769A1公开(公告)日: 2023-12-21
- 发明人: Feng-Wei Kuo , Wen-Shiang Liao
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G02B6/34
- IPC分类号: G02B6/34
摘要:
A semiconductor device includes a silicon substrate having a first region and a second region. The semiconductor device includes a silicon lens formed in the first region and along a surface of the silicon substrate on a first side of the silicon substrate. The semiconductor device includes a photonic die disposed in the first region and on a second side of the silicon substrate, the second side being opposite to the first side. The semiconductor device includes a waveguide disposed on the second side of the silicon substrate and having a grating coupler.
信息查询