- 专利标题: NONVOLATILE MEMORY DEVICE INCLUDING POWER GATING CIRCUIT AND INPUT/OUTPUT CIRCUIT OF A NONVOLATILE MEMORY DEVICE
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申请号: US18100173申请日: 2023-01-23
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公开(公告)号: US20230410917A1公开(公告)日: 2023-12-21
- 发明人: Hojun YOON , Jinha HWANG , Seunghoon LEE , Youngchul CHO , Youngdon CHOI , Junghwan CHOI
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20220073472 2022.06.16
- 主分类号: G11C16/30
- IPC分类号: G11C16/30 ; G11C16/24
摘要:
An input/output circuit of a nonvolatile memory device and a nonvolatile memory device. The input/output circuit of a nonvolatile memory device includes a driver, which is configured to output data from the nonvolatile memory device to a data line, and a power gating circuit, which is connected between the driver and a power terminal or between the driver and a ground terminal and configured to block a leakage current of the driver. The power gating circuit includes a plurality of transistors electrically connected in parallel and having threshold voltages of different magnitudes, respectively.
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