- 专利标题： SELECTIVE ETCH OF A SUBSTRATE
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申请号： US17836562申请日： 2022-06-09
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公开(公告)号： US20230420259A1公开(公告)日： 2023-12-28
- 发明人: David Thompson , Bhaskar Jyoti Bhuyan , Mark Saly , Lisa Enman , Aaron Dangerfield , Jesus Candelario Mendoza , Jeffrey W. Anthis , Lakmal Kalutarage
- 申请人： APPLIED MATERIALS, INC.
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/308 ; H01L21/02
摘要：
Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.
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