- 专利标题: METHOD OF MANUFACTURING MICRO-LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING DISPLAY APPARATUS BY USING THE SAME
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申请号: US18214808申请日: 2023-06-27
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公开(公告)号: US20230420604A1公开(公告)日: 2023-12-28
- 发明人: Dongho KIM , Howon Jang , Jehong OH , Kyungwook Hwang , Junsik Hwang
- 申请人: Samsung Electronics Co., Ltd. , Seoul National University R&DB Foundation
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.,Seoul National University R&DB Foundation
- 当前专利权人: Samsung Electronics Co., Ltd.,Seoul National University R&DB Foundation
- 当前专利权人地址: KR Suwon-si; KR Seoul
- 优先权: KR 20220078349 2022.06.27
- 主分类号: H01L33/00
- IPC分类号: H01L33/00 ; H01L33/62 ; H01L33/16
摘要:
Provided are a method of manufacturing a micro-LED and a method of manufacturing a display apparatus to which the method is applied. In the method of manufacturing a micro-LED, a membrane formed to include a cavity is formed on a substrate, and then, a sacrificial layer that may be selectively removed by wet etching is formed on the membrane. Next, a light-emitting device is formed on the sacrificial layer, and the light-emitting device is separated from the membrane by the wet etching. In an example, an undoped semiconductor layer may further be formed between the membrane and the sacrificial layer. The sacrificial layer may include an oxide layer having the same crystal lattice structure as that of the undoped semiconductor layer. In an example, another undoped semiconductor layer may further be formed between the sacrificial layer and the light-emitting device.
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