Invention Application
- Patent Title: MANUFACTURING METHOD OF RF COMPONENTS
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Application No.: US17880473Application Date: 2022-08-03
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Publication No.: US20230048614A1Publication Date: 2023-02-16
- Inventor: Patrick HAUTTECOEUR
- Applicant: STMICROELECTRONICS (TOURS) SAS
- Applicant Address: FR Tours
- Assignee: STMICROELECTRONICS (TOURS) SAS
- Current Assignee: STMICROELECTRONICS (TOURS) SAS
- Current Assignee Address: FR Tours
- Priority: FR2108655 20210812
- Main IPC: H01L21/324
- IPC: H01L21/324 ; H01L21/02
Abstract:
The present description concerns a method of manufacturing a device comprising at least one radio frequency component on a semiconductor substrate comprising: a) a laser anneal of a first thickness of the substrate on the upper surface side of the substrate; b) the forming of an insulating layer on the upper surface of the substrate; and c) the forming of said at least one radio frequency component on the insulating layer.
Information query
IPC分类:
