- 专利标题： APR PLACEMENT FOR HYBRID SHEET CELLS
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申请号： US17581365申请日： 2022-01-21
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公开(公告)号： US20230053139A1公开(公告)日： 2023-02-16
- 发明人: Kuan-Yu Chen , Wei-Cheng Tzeng , Shih-Wei Peng , Wei-Cheng Lin , Jiann-Tyng Tzeng
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L29/06 ; H01L29/423 ; H01L29/786 ; H01L21/02 ; H01L21/8238 ; H01L29/66 ; G06F30/392 ; G06F30/31
摘要：
A device including first nanosheet structures each including a first number of nanosheets, second nanosheet structures each including a second number of nanosheets that is different than the first number of nanosheets, and a plurality of rows including first rows and second rows. Where each of the first nanosheet structures is in a respective one of the first rows, each of the second nanosheet structures is in a respective one of the second rows, at least two of the first rows are adjacent one another, and at least two of the second rows are adjacent one another.
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