An approach for a nanosheet device with a single diffusion break is disclosed. The device comprises of active gate is formed above the BDI. At least the SDB is also formed over BDI with dielectric filled gate. The dielectric fill forms an indentation into the remaining nanosheets, under the spacer region, or between the inner spacers, in the SDB region. The method of creating the device comprises of, forming a gate cut opening between two ends of a dummy gate of one or more gates; forming a first sacrificial material on the gate cut opening; creating a single diffusion break; removing the dummy gate and oxide layer; removing, selectively a second sacrificial material; trimming, selectively stack of nanosheets; and forming dielectric in the gate cut opening and the single diffusion break.