- 专利标题: THREE-DIMENSIONAL INTEGRATED SYSTEM OF RFID CHIP AND SUPER CAPACITOR AND PREPARATION METHOD THEREOF
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申请号: US17052858申请日: 2020-07-02
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公开(公告)号: US20230095639A1公开(公告)日: 2023-03-30
- 发明人: Bao ZHU , Lin CHEN , Qingqing SUN , Wei ZHANG
- 申请人: FUDAN UNIVERSITY , SHANGHAI INTEGRATED CIRCUIT MANUFACTURING INNOVATION CENTER CO., LTD.
- 申请人地址: CN Shanghai; CN Shanghai
- 专利权人: FUDAN UNIVERSITY,SHANGHAI INTEGRATED CIRCUIT MANUFACTURING INNOVATION CENTER CO., LTD.
- 当前专利权人: FUDAN UNIVERSITY,SHANGHAI INTEGRATED CIRCUIT MANUFACTURING INNOVATION CENTER CO., LTD.
- 当前专利权人地址: CN Shanghai; CN Shanghai
- 优先权: CN202010618775.0 20200630
- 国际申请: PCT/CN2020/099994 WO 20200702
- 主分类号: G06K19/077
- IPC分类号: G06K19/077 ; H01G11/08
摘要:
The present disclosure discloses a three-dimensional integration system of an RFID chip and a supercapacitor and a manufacturing method thereof. The three-dimensional integration system of an RFID chip and a supercapacitor includes: a silicon substrate (200); an RFID chip (201) disposed on a front surface of the silicon substrate (200); a supercapacitor disposed on a back surface of the silicon substrate (200) at a position corresponding to the RFID chip (201), but not in contact with the RFID chip (201); through silicon via structures penetrating the silicon substrate (200) and respectively disposed on two sides of the RFID chip (201); wherein the RFID chip (201) has a chip positive electrode (2021) and a chip negative electrode (2022) electrically connected with a capacitor contact positive electrode (2131) and a capacitor contact negative electrode (2132) of the supercapacitor through the through silicon via structures on the two sides respectively; and a packaging substrate (218) electrically connected to the capacitor contact positive electrode (2131) and the capacitor contact negative electrode (2132).
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