Invention Application
- Patent Title: HIGH DENSITY INTERCONNECTION AND WIRING LAYERS, PACKAGE STRUCTURES, AND INTEGRATION METHODS
-
Application No.: US17488968Application Date: 2021-09-29
-
Publication No.: US20230100769A1Publication Date: 2023-03-30
- Inventor: John Knickerbocker , Mukta Ghate Farooq , Katsuyuki Sakuma
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/538 ; H01L23/66 ; H01L21/683 ; H01L21/48 ; H01P3/00 ; H01P11/00 ; H01L23/367

Abstract:
An interconnect for a semiconductor device includes a laminate substrate; a first plurality of electrical devices in or on a surface of the laminate substrate; a redistribution layer having a surface disposed on the surface of the laminate substrate; a second plurality of electrical devices in or on the surface of the redistribution layer; and a plurality of transmission lines between the first plurality of electrical devices and the second plurality of electrical devices. The surface of the laminate substrate and the surface of the redistribution layer are parallel to each other to form a dielectric structure and a conductor structure.
Public/Granted literature
- US12015003B2 High density interconnection and wiring layers, package structures, and integration methods Public/Granted day:2024-06-18
Information query
IPC分类: