- 专利标题： ELECTRODE STRUCTURE FOR SECONDARY BATTERY, METHOD OF MANUFACTURING THE SAME, AND SECONDARY BATTERY COMPRISING THE SAME
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申请号： US17931631申请日： 2022-09-13
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公开(公告)号： US20230102903A1公开(公告)日： 2023-03-30
- 发明人: Jinsuck Heo , Samuel Robert Cross , Kyounghwan Kim , Joungwon Park , Jeongkuk Shon , Huisu Jeong
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2021-0141364 20211021
- 主分类号： H01M4/80
- IPC分类号： H01M4/80 ; H01M4/04
摘要：
An electrode for a secondary battery includes a current collector; and an active material structure on the current collector, the activate material structure including: at least one first high-density layer, and at least one second high-density layer, the at least one second high-density layer being further away from the current collector as compared to the at least one first high-density layer; and a low-density layer between the at least one first high-density layer and the at least one second high-density layer, wherein a thickness of the at least one second high-density layer is greater than a thickness of the at least one first high-density layer.
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